Quantum Wells in Polar-Nonpolar Oxide Heterojunction Systems

Abstract

We address the electronic structure of quantum wells in polar-nonpolar oxide heterojunction systems focusing on the case of non-polar BaVO${}_3$ wells surrounded by polar LaTiO${}_3$ barriers. Our discussion is based on a density functional description using the local spin density approximation with local correlation corrections (LSDA+U). We conclude that a variety of quite different two-dimensional electron systems can occur at interfaces between insulating materials depending on band line-ups and on the geometrical arrangement of polarity discontinuities.

9 pages, 1 tex file and 15 figures(Final version for Physical Review B)

References in corpus (3)

• Magnetic effects at the interface between nonmagnetic oxides
• Modulation Doping near Mott-Insulator Heterojunctions
• Electronic Interface Reconstruction at Polar-Nonpolar Mott Insulator Heterojunctions