Two-dimensional electron-gas-like charge transport at magnetic Heusler alloy-SrTiO${}_3$ interface

Abstract

We report remarkably low residual resistivity, giant residual resistivity ratio, free-electron-like Hall resistivity and high mobility ($\approx$ 10${}^4$ cm${}^2$V${}^{-1}$s${}^{-1}$) charge transport in epitaxial films of Co${}_2$MnSi and Co${}_2$FeSi grown on (001) SrTiO${}_3$. This unusual behavior is not observed in films deposited on other cubic oxide substrates of comparable lattice parameters. The scaling of the resistivity with thickness of the films allow extraction of interface conductance, which can be attributed to a layer of oxygen vacancies confined within 1.9 nm of the interface as revealed by atomically resolved electron microscopy and spectroscopy. The high mobility transport observed here at the interface of a fully spin polarized metal is potentially important for spintronics applications.

References in corpus (8)

• Magnetic effects at the interface between nonmagnetic oxides
• Metallic and insulating interfaces of amorphous SrTiO3-based oxide heterostructures
• A high-mobility two-dimensional electron gas at the heteroepitaxial spinel/perovskite complex oxide interface of γ-Al2O3/SrTiO3
• Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface
• High mobility conduction at (110) and (111) LaAlO3/SrTiO3 interfaces
• Epitaxial film growth and magnetic properties of Co_2FeSi
• Evolution of ferromagnetic and spin-wave resonances with crystalline order in thin films of full-Heusler alloy Co2MnSi
• Hall effect in laser ablated Co_2(Mn,Fe)Si thin films

Cited by in corpus (3)

• Magnetoelastic coupling induced magnetic anisotropy in Co${}_2$(Fe/Mn)Si thin films
• Resistance minimum and electrical conduction mechanism in polycrystalline CoFeB thin films
• Electronic structure and thermoelectric properties of CoTiSi half-Heusler alloy: Doping overtones