Enhanced spin-orbit coupling and charge carrier density suppression in LaAl1-xCrxO3/SrTiO3 heterointerfaces

Abstract

We report a gradual suppression of the two-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 interface on substitution of chromium at the Al sites. The sheet carrier density at the interface (ns) drops monotonically from 2.2x10(14) cm-2 to 2.5x10(13) cm-2 on replacing nearly 60 percent of Al sites by Cr and the sheet resistance (Rs) exceeds the quantum limit for localization (h/2e2) in the concentrating range 40 to 60 percent of Cr.

References in corpus (7)

• Magnetic effects at the interface between nonmagnetic oxides
• Avoiding the polarization catastrophe in LaAlO3 overlayers on SrTiO3(001) through a polar distortion
• Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface
• Strong spin-orbit interactions and weak antilocalization in carbon doped p-type GaAs heterostructures
• Electronic properties of buried hetero-interfaces of LaAlO3 on SrTiO3
• Novel photo-conducting state and its perturbation by electrostatic fields in oxide-based two-dimensional electron gas
• Optically tuned dimensionality crossover in photocarrier-doped SrTiO${}_3$: onset of weak localization

Cited by in corpus (2)

• Correlated Non-Gaussian phase fluctuations in LaAlO${}_3$/SrTiO${}_3$ heterointerface
• Signature of enhanced spin-orbit interaction in the magnetoresistance of LaTiO${}_3$/SrTiO${}_3$ interfaces on $\delta$-doping