Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films

Abstract

The discovery of topological insulators (TIs), materials with bulk band gaps and protected cross-gap surface states, in compounds such as Bi2Se3 has generated much interest in identifying topological surface states (TSSs) in other classes of materials. In particular, recent theory calculations suggest that TSSs may be found in half-Heusler ternary compounds. If experimentally realizable, this would provide a materials platform for entirely new heterostructure spintronic devices that make use of the structurally-identical but electronically-varied nature of Heusler compounds. Here, we show the presence of a TSS in epitaxially grown thin films of the half-Heusler compound PtLuSb. Spin and angle-resolved photoemission spectroscopy (ARPES), complemented by theoretical calculations, reveals a surface state with linear dispersion and a helical tangential spin texture consistent with previous predictions. This experimental verification of TI behavior is a significant step forward in establishing half-Heusler compounds as a viable material system for future spintronics devices.

12 pages (8 main, 4 supplemental), 9 figures (5 main, 4 supplemental), V2 updated reference, V3 updated abbreviation

References in corpus (8)

• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Half-metallic ferromagnets: From band structure to many-body effects
• Covalent bonding and the nature of band gaps in some half-Heusler compounds
• Metallic surface electronic state in half-Heusler compounds RPtBi (R = Lu, Dy, Gd)
• Theoretical search for half-Heusler topological insulators
• Intrinsic point defects in aluminum antimonide
• Transition from semiconducting to metallic-like conducting and weak antilocalization effect in single crystals of LuPtSb
• Surface reconstructions and transport of epitaxial PtLuSb (001) thin films grown by MBE

Cited by in corpus (21)

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• Magnetotransport properties and giant anomalous Hall angle in half-Heusler compound TbPtBi
• Model Hamiltonian and Time Reversal Breaking Topological Phases of Anti-ferromagnetic Half-Heusler Materials
• Double Band Inversion in $\alpha$-Sn: Appearance of Topological Surface States and the Role of Orbital Composition
• Linear-in-frequency optical conductivity in GdPtBi due to transitions near the triple points
• Efficient spin current source using a half-Heusler alloy topological semimetal with Back-End-of-Line compatibility
• Perspective: Heusler interfaces -- opportunities beyond spintronics?
• Observation of Dirac state in half-Heusler material YPtBi
• Epitaxial Heusler Superlattice Co2MnAl/Fe2MnAl with Perpendicular Magnetic Anisotropy and Termination-Dependent Half-Metallicity
• Surface reconstructions and transport of epitaxial PtLuSb (001) thin films grown by MBE
• Growth, electrical, structural, and magnetic properties of half-Heusler CoTi${}_{1-x}$Fe${}_x$Sb
• Semi-adsorption-controlled growth window for half Heusler FeVSb epitaxial films
• Formation of two-dimensional electron and hole gases at the interface of half-Heusler semiconductors
• Topological band inversion in HgTe(001): surface and bulk signatures from photoemission
• Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb
• Non-trivial topological valence bands of common diamond and zinc-blende semiconductors
• Reentrant topological phase in half-Heusler compounds
• Electronic structure and hinge states of strained half-Heusler compounds LiSbZn and LiBiZn