A new class of topological insulators from I-III-IV half-Heusler compounds with strong band inversion strength
arXiv:1310.4696 · doi:10.1063/1.4866716
Abstract
In this paper, by first principle calculations, we investigate systematically the band topology of a new half-Heusler family with composition of I(A)-III(A)-IV(A). The results clearly show that many of the I-III-IV half-Heusler compounds are in fact promising to be topological insulator candidates. The characteristic feature of these new topological insulators is the naturally strong band inversion strength (up to -2eV) without containing heavy elements. Moreover, we found that both the band inversion strength and the topological insulating gap can be tailored through strain engineering, and therefore would be grown epitaxially in the form of films, and useful in spintronics and other applications.
17 pages, 4 figs, submitted for publication
References in corpus (11)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- The space group classification of topological band insulators
- Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators
- Na2IrO3 as a spin-orbit-assisted antiferromagnetic insulator with a 340 meV gap
- Half-Heusler Topological Insulators: A First-Principle Study with the Tran-Blaha Modified Becke-Johnson Density Functional
- A large energy-gap oxide topological insulator based on the superconductor BaBiO3
- Three-Dimensional Topological Insulators in I-III-VI and II-IV-V Chalcopyrite Semiconductors
- Strain tuning of topological band order in cubic semiconductors
- Topological Insulators in Hexagonal Wurtzite-type Binary Compounds