Topological Hall effect in thin films of Mn${}_{1.5}$PtSn

Abstract

Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn${}_{1.5}$PtSn that were grown by means of magnetron sputtering on MgO(001). The topological Hall resistivity is present up to ${\mu }_{0}H\approx 4$T below the spin reorientation transition temperature, $T_s=185$~K. We find, that the maximum topological Hall resistivity is of comparable magnitude as the anomalous Hall resistivity. Owing to the size, the topological Hall effect is directly evident prior to the customarily performed subtraction of magnetometry data. Further, we underline the robustness of the topological Hall effect in Mn\textsubscript{2-x}PtSn by extracting the effect for multiple stoichiometries (x~=~0.5, 0.25, 0.1) and film thicknesses (t = 104, 52, 35~nm) with maximum topological Hall resistivities between $0.76\mu \Omega$cm and $1.55\mu \Omega$cm at 150~K.

arXiv comment6 pages, 5 figures

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• Signatures of a liquid-crystal transition in spin-wave excitations of skyrmions
• All Electrical Access to Topological Transport Features in Mn${}_{1.8}$PtSn Films
• Role of magnetic exchange interactions in chiral-type Hall effects of epitaxial Mn${}_x$PtSn films
• Spin dynamics in bulk MnNiGa and Mn${}_{1.4}$Pt${}_{0.9}$Pd${}_{0.1}$Sn investigated by muon spin relaxation
• Magneto-transport and magnetic textures in Ho/FeCoGd/β-W multilayers