High Electron Mobility and Large Magnetoresistance in the Half-Heusler Semimetal LuPtBi

Abstract

Materials with high carrier mobility showing large magnetoresistance (MR) have recently received much attention because of potential applications in future high-performance magneto-electric devices. Here, we report on the discovery of an electron-hole-compensated half-Heusler semimetal LuPtBi that exhibits an extremely high electron mobility of up to 79000 cm2/Vs with a non-saturating positive MR as large as 3200% at 2 K. Remarkably, the mobility at 300 K is found to exceed 10500 cm2/Vs, which is among the highest values reported in three-dimensional bulk materials thus far. The clean Shubnikov-de Haas quantum oscillation observed at low temperatures and the first-principles calculations together indicate that the high electron mobility is due to a rather small effective carrier mass caused by the distinctive band structure of the crystal. Our finding provide a new approach for finding large, high-mobility MR materials by designing an appropriate Fermi surface topology starting from simple electron-hole-compensated semimetals.

26 pages,10 pages, 1 SUPPLEMENTARY, accepted for publication in Physical review B

References in corpus (10)

• Titanic Magnetoresistance in WTe2
• Extremely large magnetoresistance and ultrahigh mobility in the topological Weyl semimetal NbP
• Linear magnetoresistance caused by mobility fluctuations in the n-doped Cd3As2
• Half-Heusler Compounds as a New Class of Three-Dimensional Topological Insulators
• Electronic structure basis for the titanic magnetoresistance in WTe${}_2$
• Metal-Insulator-Like Behavior in Semimetallic Bismuth and Graphite
• Anisotropic giant magnetoresistance in NbSb2
• Weak Antilocalization Effect and Noncentrosymmetric Superconductivity in a Topologically Nontrivial Semimetal LuPdBi
• Intrinsic Mobility Limiting Mechanisms in Lanthanum-doped Strontium Titanate
• Magnetic-field induced band-structure change in CeBiPt

Cited by in corpus (15)

• Observation of Unusual Topological Surface States in Half-Heusler Compounds LnPtBi (Ln=Lu, Y)
• Observation of pseudo two dimensional electron transport in the rock salt type topological semimetal LaBi
• Superconductivity in half-Heusler compound TbPdBi
• Tuning the Parity Mixing of Singlet-Septet Pairing in a Half-Heusler Superconductor
• Perspective: Heusler interfaces -- opportunities beyond spintronics?
• Experimental and theoretical study of the correlated compound YbCdSn: Evidence for large magnetoresistance and mass enhancement
• Large anomalous Hall angle in a topological semimetal candidate TbPtBi
• Dielectric and electronic properties of three-dimensional Luttinger semimetals with a quadratic band touching
• Magnetotransport signatures of chiral magnetic anomaly in the half-Heusler phase ScPtBi
• Nonlinear field dependence of Hall effect and high-mobility multi-carrier transport in an altermagnet CrSb
• First-principles methodology for studying magnetotransport in narrow-gap semiconductors: an application to Zirconium Pentatelluride ZrTe5
• BP_5 Monolayer with Multiferroicity and Negative Poisson's Ratio: A Prediction by Global Optimization Method
• Quasi-linear magnetoresistance and paramagnetic singularity in Hypervalent Bismuthide
• Highly sensitive magnetic properties and large linear magnetoresistance in antiferromagnetic CrxSe(0.875\lex\le1)single crystals
• Transverse and Longitudinal Magnetothermopower Promoted by Ambipolar Effect in Half-Heusler Topological Materials