105 citations · 279 across the 8 of their papers we have counts for
9 papers
Multi-Branch Transport in a Back-gated WS Transistor at Deep-Cryogenic Temperature
Megan Powell, Vilas Patil, Hazel Neill +5
Two-dimensional materials are promising candidates for electronic applications beyond the operating limits of conventional semiconductor technologies. Within this class, transition…
Tuning the Electronic States of Bi2Se3 Films with Large Spin-Orbit Interaction Using Molecular Heterojunctions
Matthew Rogers, Craig Knox, Bryan Hickey +13
An electric bias can shift the Fermi level along the Dirac cone of a topological insulator and modify its charge transport, but tuning the electronic states and spin-orbit interact…
Control of 2D plasmons in the topological insulator Bi2Se3 with highly crystalline C60 overlayers
Mairi McCauley, Lida Ansari, Farzan Gity +8
Topological Insulators (TIs) present an interesting materials platform for nanoscale, high frequency devices because they support high mobility, low scattering electronic transport…
Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors
Alessandro Grillo, Enver Faella, Aniello Pelella +6
Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental press…
Electronic and structural properties of rhombohedral [111] and [110] oriented ultra-thin bismuth nanowires
Lida Ansari, Farzan Gity, James C. Greer
Structures and electronic properties of rhombohedral [111] and [110] bismuth nanowires are calculated with the use of density functional theory. The formation of an energy band gap…
Reinventing Solid State Electronics: Harnessing Quantum Confinement in Bismuth Thin Films
Farzan Gity, Lida Ansari, Martin Lanius +4
Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materia…
First Principle-based Analysis of Single-Walled Carbon Nanotube and Silicon Nanowire Junctionless Transistors
Lida Ansari, Baruch Feldman, Giorgos Fagas +5
Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain…
Transport properties and electrical device characteristics with the TiMeS computational platform: application in silicon nanowires
Dimpy Sharma, Lida Ansari, Baruch Feldman +3
Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemica…
Simulations of gated Si nanowires and 3-nm junctionless transistors
Lida Ansari, Baruch Feldman, Giorgos Fagas +2
Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless…