105 citations · 279 across the 8 of their papers we have counts for
7 papers · 1 filter
Multi-Branch Transport in a Back-gated WS Transistor at Deep-Cryogenic Temperature
Megan Powell, Vilas Patil, Hazel Neill +5
Two-dimensional materials are promising candidates for electronic applications beyond the operating limits of conventional semiconductor technologies. Within this class, transition…
Control of 2D plasmons in the topological insulator Bi2Se3 with highly crystalline C60 overlayers
Mairi McCauley, Lida Ansari, Farzan Gity +8
Topological Insulators (TIs) present an interesting materials platform for nanoscale, high frequency devices because they support high mobility, low scattering electronic transport…
Electronic and structural properties of rhombohedral [111] and [110] oriented ultra-thin bismuth nanowires
Lida Ansari, Farzan Gity, James C. Greer
Structures and electronic properties of rhombohedral [111] and [110] bismuth nanowires are calculated with the use of density functional theory. The formation of an energy band gap…
Reinventing Solid State Electronics: Harnessing Quantum Confinement in Bismuth Thin Films
Farzan Gity, Lida Ansari, Martin Lanius +4
Solid state electronics relies on the intentional introduction of impurity atoms or dopants into a semiconductor crystal and/or the formation of junctions between different materia…
First Principle-based Analysis of Single-Walled Carbon Nanotube and Silicon Nanowire Junctionless Transistors
Lida Ansari, Baruch Feldman, Giorgos Fagas +5
Junctionless transistors made of silicon have previously been demonstrated experimentally and by simulations. Junctionless devices do not require fabricating an abrupt source-drain…
Transport properties and electrical device characteristics with the TiMeS computational platform: application in silicon nanowires
Dimpy Sharma, Lida Ansari, Baruch Feldman +3
Nanoelectronics requires the development of a priori technology evaluation for materials and device design that takes into account quantum physical effects and the explicit chemica…
Simulations of gated Si nanowires and 3-nm junctionless transistors
Lida Ansari, Baruch Feldman, Giorgos Fagas +2
Inspired by recent experimental realizations and theoretical simulations of thin silicon nanowire-based devices, we perform predictive first-principles simulations of junctionless…