Conductance of gated junctions as a probe of topological interface states

Abstract

Energy dispersion and spin orientation of the protected states at interfaces between topological insulators (TIs) and non-topological materials depend on the charge redistribution, strain, and atomic displacement at the interface. Knowledge of these properties is essential for applications of topological compounds, but direct access to them in the interface geometry is difficult. We show that conductance of a gated double junction at the surface of a topological insulator exhibits oscillations and a quasi-linear decay as a function of gate voltage in different regimes. These give the values for the quasiparticle velocities along and normal to the junction in the interface region, and determine the symmetry of the topological interface states. The results are insensitive to the boundary conditions at the junction.

References in corpus (30)

• The electronic properties of graphene
• Topological Insulators
• Topological insulators and superconductors
• Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
• New directions in the pursuit of Majorana fermions in solid state systems
• Spin Transfer Torque Generated by the Topological Insulator Bi_2Se_3
• Andreev reflection and Klein tunneling in graphene
• Spintronics and Pseudospintronics in Graphene and Topological Insulators
• Hexagonal Warping Effects in the Surface States of Topological Insulator Bi${}_2$Te${}_3$
• Three-Dimensional Topological Insulators
• Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators
• Boundary conditions for Dirac fermions on a terminated honeycomb lattice
• Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
• Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques
• Spin and Charge Transport on the Surface of a Topological Insulator
• Surface States of Topological Insulators
• Symmetry of boundary conditions of the Dirac equation for electrons in carbon nanotubes
• Tuning the conductance of Dirac fermions on the surface of a topological insulator
• Relationship between Fermi-Surface Warping and Out-of-Plane Spin Polarization in Topological Insulators: a View from Spin-Resolved ARPES
• Boundary problems for Dirac electrons and edge-assisted Raman scattering in graphene
• Tuning the Dirac point to the Fermi level in the ternary topological insulator (Bi${}_{1-x}$Sb${}_x$)${}_2$Te${}_3$
• Junction between surfaces of two topological insulators
• Band engineering of Dirac surface states in topological insulators-based van der Waals heterostructures
• Magnetic field induced Fabry-Pérot resonances in helical edge states
• On the Role of Self-Adjointness in the Continuum Formulation of Topological Quantum Phases
• Interface symmetry and spin control in topological insulator-semiconductor heterostructures
• Tunable unconventional Kondo effect on topological insulator surfaces
• A cascading nonlinear magneto-optical effect in topological insulators
• Voltage-Controlled Topological-Spin Switch for Ultra-Low-Energy Computing--Performance Modeling and Benchmarking
• Proximity-Induced Superconductivity at Non-Helical Topological Insulator Interfaces

Cited by in corpus (4)

• Kekulé Induced Valley Birefringence and Skew Scattering in Graphene
• Bound states and controllable currents on Topological Insulator surfaces with extended magnetic defects
• Andreev spectroscopy of nonhelical spin textures in topological insulators
• Local density of state oscillations in laterally heterostructured topological insulator-semiconductor systems