Spatial Distribution of Topological Surface State Electrons in Bi${}_2$Se${}_3$ Probed by Na${}^{+}$ Low Energy Ion Scattering

Abstract

Bi${}_2$Se${}_3$ is a topological insulator whose unique properties result from topological surface states (TSS) in the band gap. Low energy ion scattering can determine the properties of the outermost few atomic layers of a solid. The deposition of Cs helps to reveal that the neutralization of Na${}^{+}$ is larger when scattered from surface Se than from Bi. This is caused by the spatial redistribution of the conductive charges in the TSS, which are primarily positioned between the first and second atomic layers. This provides direct experimental evidence of the spatial distribution of the TSS electrons.

This work has been replaced by other papers (arXiv:1807.08377 and arXiv:1707.09251), and is thus redundant

References in corpus (7)

• Non-Abelian Anyons and Topological Quantum Computation
• Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
• First Principles Studies on 3-Dimentional Strong Topological Insulators: Bi2Te3, Bi2Se3 and Sb2Te3
• Enhanced spin Seebeck effect signal due to spin-momentum locked topological surface states
• Principles of crystal growth of intermetallic and oxide compounds from molten solutions
• Termination of Single Crystal Bi2Se3 Surfaces Prepared by Various Methods
• Preparation of clean surfaces and Se vacancy formation in Bi${}_2$Se${}_3$ by ion bombardment and annealing

Cited by in corpus (2)

• The growth of bismuth on Bi${}_2$Se${}_3$ and the stability of the first bilayer
• Halogen adsorption and reaction with Bi${}_2$(Se,Te)${}_3$ and Bi/Bi${}_2$(Se,Te)${}_3$