Orbital contributions in the element-resolved valence electronic structure of Bi2Se3
arXiv:2108.01833 · doi:10.1103/PhysRevB.104.245105
Abstract
In this work, we studied the bulk band structure of a topological insulator (TI) Bi2Se3 and determined the contributions of the Bi and Se orbital states to the valence bands using standing wave-excited hard x-ray photoemission spectroscopy (SW-HAXPES). This SW technique can provide the element-resolved information and extract individual Bi and Se contributions to the Bi2Se3 valence band. Comparisons with density functional theory (DFT) calculations (LDA and GW) reveal that the Bi 6s, Bi 6p, and Se 4p states are dominant in the Bi2Se3 HAXPES valence band. These findings pave a way for studying the element-resolved band structure and orbital contributions of this class of TIs.
22 pages, 5 figures
References in corpus (5)
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
- First Principles Studies on 3-Dimentional Strong Topological Insulators: Bi2Te3, Bi2Se3 and Sb2Te3
- Efficient implementation of the GW approximation within the all-electron FLAPW method
- Modulation of Dirac electrons in epitaxial Bi2Se3 ultrathin films on van-der-Waals ferromagnet Cr2Si2Te6