Abrupt Enhancement of Spin-Orbit Scattering Time in Ultrathin Semimetallic SrIrO${}_3$ Close to the Metal-Insulator Transition

Abstract

We report a magnetotransport study of spin relaxation in 1.4-21.2 nm epitaxial SrIrO${}_3$ thin films coherently strained on SrTiO${}_3$ substrates. Fully charge compensated semimetallic transport has been observed in SrIrO${}_3$ films thicker than 1.6 nm, where the charge mobility at 10 K increases from 45 cm${}^2$/Vs to 150 cm${}^2$/Vs with decreasing film thickness. In the two-dimensional regime, the charge dephasing and spin-orbit scattering lengths extracted from the weak localization/anti-localization effects show power-law dependence on temperature, pointing to the important role of electron-electron interaction. The spin-orbit scattering time ${\tau }_{\text{so}}$ exhibits an Elliott-Yafet mechanism dominated quasi-linear dependence on the momentum relaxation time ${\tau }_{\text{p}}$. Ultrathin films approaching the critical thickness of metal-insulator transition show an abrupt enhancement in ${\tau }_{\text{so}}$, with the corresponding ${\tau }_{\text{so}}/{\tau }_{\text{p}}$ about 7.6 times of the value for thicker films. A likely origin for such unusual enhancement is the onset of strong electron correlation, which leads to charge gap formation and suppresses spin scattering.

arXiv comment23 pages, 4 figures

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• Large Rashba parameter for 4d strongly correlated perovskite oxide SrNbO3 ultrathin films