Manipulating Berry curvature of SrRuO3 thin films via epitaxial strain

Abstract

Berry curvature plays a crucial role in exotic electronic states of quantum materials, such as intrinsic anomalous Hall effect. As Berry curvature is highly sensitive to subtle changes of electronic band structures, it can be finely tuned via external stimulus. Here, we demonstrate in SrRuO3 thin films that both the magnitude and sign of anomalous Hall resistivity can be effectively controlled with epitaxial strain. Our first-principles calculations reveal that epitaxial strain induces an additional crystal field splitting and changes the order of Ru d orbital energies, which alters the Berry curvature and leads to the sign and magnitude change of anomalous Hall conductivity. Furthermore, we show that the rotation of Ru magnetic moment in real space of tensile strained sample can result in an exotic nonmonotonic change of anomalous Hall resistivity with the sweeping of magnetic field, resembling the topological Hall effect observed in non-coplanar spin systems. These findings not only deepen our understanding of anomalous Hall effect in SrRuO3 systems, but also provide an effective tuning knob to manipulate Berry curvature and related physical properties in a wide range of quantum materials.

References in corpus (5)

• First Principles Calculation of Anomalous Hall Conductivity in Ferromagnetic bcc Fe
• Intrinsic vs. extrinsic anomalous Hall effect in ferromagnets
• Interface-driven topological Hall effect in SrRuO${}_3$-SrIrO${}_3$ bilayer
• Structural, electronic and magnetic properties of SrRuO${}_3$ under epitaxial strain
• Correlation-driven eightfold magnetic anisotropy in a two-dimensional oxide monolayer

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• Tuning Structural, Transport and Magnetic Properties of Epitaxial SrRuO3 through Ba-Substitution
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