Determination of the intrinsic anomalous Hall effect of SrRuO${}_3$

Abstract

The anomalous Hall effect (AHE) of epitaxial SrRuO${}_3$ films with varying lattice parameters is investigated, and analyzed according to the Berry-phase scenario. SrRuO${}_3$ thin films were deposited on SrTiO${}_3$ substrates directly, or using intermediate buffer layers, in order to finely control the epitaxial strain. The AHE of the different films exhibits intrinsic features such as the sign change of the Hall resistivity with the temperature, even for small thicknesses of SrRuO${}_3$. However, the anomalous Hall conductivity is greatly reduced from its intrinsic value as the carrier scattering is increased when the epitaxial strain is released. We argue that the AHE of fully strained SrRuO${}_3$ film with low residual resistivity represents the intrinsic AHE of SrRuO${}_3$.

arXiv commentREVTeX 4 style; 5 pages, 5 figures

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• Anomalous Hall effect in ferromagnetic semiconductors
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Cited by in corpus (6)

• Manipulating Berry curvature of SrRuO3 thin films via epitaxial strain
• Scaling of the anomalous Hall effect in SrRuO${}_3$
• Anomalous Hall effect in Rashba two-dimensional electron systems based on narrow-band semiconductors: side-jump and skew scattering mechanisms
• Infrared anomalous Hall effect in SrRuO${}_3$: Evidence for crossover to intrinsic behavior
• Determination of the resistivity anisotropy of SrRuO${}_3$ by measuring the planar Hall effect
• Nonvolatile ferroelectric field control of the anomalous Hall effect in BiFeO3/SrRuO3 bilayer