Role of La doping for Topological Hall Effect in Epitaxial EuO Films

Abstract

We report the critical role of La doping in the topological Hall effect observed in LaxEu1-xO thin films (~ 50 nm) grown by molecular beam epitaxy. When the La doping exceeds 0.036, topological Hall effect emerges, which we attribute to the formation of magnetic skyrmions. Besides, the La doping is found to play a critical role in determining the phases, densities, and sizes of the skyrmions in the LaxEu1-xO thin films. The maximum region of the skyrmion phase diagram is observed on the La0.1Eu0.9O thin film. As the La doping increases, the skyrmion density increases while the skyrmion size decreases. Our findings demonstrate the important role of La doping for the skyrmions in EuO films, which could be important for future studies of magnetic skyrmions in Heisenberg ferromagnets.

arXiv comment11 pages, 5 figures, To appear in Physics Review Materials

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• Topological Hall effect in single thick SrRuO3 layers induced by defect engineering
• Superconductor-metal quantum transition at the EuO-KTaO3 interface
• Advances in Complex Oxide Quantum Materials Through New Approaches to Molecular Beam Epitaxy
• Electronic scattering off a magnetic hopfion
• Theory of an electron asymmetric scattering on skyrmion textures in two-dimensional systems
• Emergent Topological Hall Effect in Fe-doped Monolayer WSe2
• Interface ferromagnetism and anomalous Hall effect of CdO/ferromagnetic insulator heterostructures
• Non-uniform magnetization profile in ferromagnetic heterostructures leading to topological Hall effect like signatures