Tunnel field-effect transistors for sensitive terahertz detection
arXiv:2010.03040 · doi:10.1038/s41467-020-20721-z
Abstract
The rectification of electromagnetic waves to direct currents is a crucial process for energy harvesting, beyond-5G wireless communications, ultra-fast science, and observational astronomy. As the radiation frequency is raised to the sub-terahertz (THz) domain, ac-to-dc conversion by conventional electronics becomes challenging and requires alternative rectification protocols. Here we address this challenge by tunnel field-effect transistors made of bilayer graphene (BLG). Taking advantage of BLG's electrically tunable band structure, we create a lateral tunnel junction and couple it to an antenna exposed to THz radiation. The incoming radiation is then down-converted by the tunnel junction nonlinearity, resulting in high-responsivity (> 4 kV/W) and low-noise (0.2 pW/}) detection. We demonstrate how switching from intraband Ohmic to interband tunneling regime can raise detectors' responsivity by few orders of magnitude, in agreement with the developed theory. Our work demonstrates a potential application of tunnel transistors for THz detection and reveals BLG as a promising platform therefor.
References in corpus (24)
- Landau level degeneracy and quantum Hall effect in a graphite bilayer
- Graphene field effect transistors as room-temperature Terahertz detectors
- Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors
- Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
- Optical Rectification and Field Enhancement in a Plasmonic Nanogap
- Resonant Terahertz Detection Using Graphene Plasmons
- Black-Phosphorus Terahertz Photodetectors
- Robust fractional quantum Hall states and continuous quantum phase transitions in a half-filled bilayer graphene Landau level
- Fast and Sensitive Terahertz Detection Using an Antenna-Integrated Graphene pn Junction
- High-frequency rectification via chiral Bloch electrons
- Thickness-Controlled Black Phosphorus Tunnel Field-Effect Transistor for Low Power Switches
- High performance bilayer-graphene Terahertz detectors
- Graphene-based Josephson junction microwave bolometer
- Single Atom Plasmonic Switch
- Electronic properties of a biased graphene bilayer
- Terahertz ratchet effects in graphene with a lateral superlattice
- Graphene-based Josephson junction single photon detector
- Coupled quantum dots in bilayer graphene
- Dual Origin of Room Temperature Sub-Terahertz Photoresponse in Graphene Field Effect Transistors
- Gate-defined electron-hole double dots in bilayer graphene
- Thermoelectric graphene photodetectors with sub-nanosecond response times at Terahertz frequencies
- Pseudo-Euler equations from nonlinear optics: plasmon-assisted photodetection beyond hydrodynamics
- Electron cooling with graphene-insulator-superconductor tunnel junctions and applications to fast bolometry
- Singularity-enhanced terahertz detection in high-mobility field-effect transistors
Cited by in corpus (17)
- Roadmap for Photonics with 2D Materials
- Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
- Ultralow-noise terahertz detection by p-n junctions in gapped bilayer graphene
- Tailored nano-electronics and photonics with two-dimensional materials at terahertz frequencies
- Engineering THz-frequency light generation, detection and manipulation through graphene
- Modulation characteristics of uncooled graphene photodetectors
- Terahertz photoconductivity in bilayer graphene transistors: evidence for tunneling at gate-induced junctions
- Coulomb electron drag mechanism of terahertz plasma instability in n+-i-n-n+ graphene FETs with ballistic injection
- Optimal asymmetry of transistor-based terahertz detectors
- A place for two-dimensional plasmonics in electromagnetic wave detection
- Cascade switching current detectors based on arrays of Josephson junctions
- Microscopic theory of plasmon-enabled resonant terahertz detection in bilayer graphene
- Limiting performance of graphene bilayer sub-terahertz detectors at large induced band gap
- Inverse Design of Broadband Antennas for Terahertz Devices Based on 2D Materials
- Enhanced Terahertz Photoresponse via Acoustic Plasmon Cavity Resonances in Scalable Graphene
- Mode-selective cloaking and phase-matching cavity resonances in bilayer graphene transport
- Mode-Resolved Multiband Ballistic Transport and Conductance Thresholds in Bilayer Graphene Junctions