Singularity-enhanced terahertz detection in high-mobility field-effect transistors
arXiv:2005.04739 · doi:10.1103/PhysRevApplied.13.064072
Abstract
Detectors of high-frequency radiation based on high-electron-mobility transistors benefit from low noise, room-temperature operation, and the possibility to perform radiation spectroscopy using gate-tunable plasmon resonance. Despite successful proof-of-concept demonstrations, the responsivity of transistor-based detectors of THz radiation, at present, remains fairly poor. To resolve this problem, we propose a class of devices supporting singular plasmon modes, i.e. modes with strong electric fields near keen electrodes. A large plasmon-enhanced electric field results in amplified non-linearities, and thus efficient ac-to-dc conversion. We analyze sub-terahertz detectors based on a two-dimensional electron system (2DES) in the Corbino geometry as a prototypical and exactly solvable model and show that the responsivity scales as with the radius of the inner contact . This enables responsivities exceeding 10 kV/W at sub-THz frequencies for nanometer-scale contacts readily accessible by modern nanofabrication techniques.
6 paged, 5 figures
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Cited by in corpus (4)
- Tunnel field-effect transistors for sensitive terahertz detection
- Terahertz Radiation from the Dyakonov-Shur Instability of Hydrodynamic Electrons in a Corbino Geometry
- Dipole excitation of collective modes in viscous two-dimensional electron systems
- Eccentric Corbino FET in magnetic field: a highly tunable photodetector