Exact solution for driven oscillations in plasmonic field-effect transistors

Abstract

High-mobility field effect transistors can serve as resonant detectors of terahertz radiation due to excitation of plasmons in the channel. The modeling of these devices previously relied either on approximate techniques, or complex full-wave simulations. In this paper, we obtain an exact solution for driven electrical oscillations in plasmonic field-effect transistor with realistic contact geometry. The obtained solution highlights the importance of evanescent plasma waves excited near the contacts, which qualitatively modify the detector responsivity spectra. We derive the boundary condition on the ac floating electrodes of plasmonic FET which interpolates between open-circuit (Dyakonov-Shur) and short-circuit (clamped voltage) boundary conditions. In both limits, the FET photovoltage possesses resonant fringes, however, the absolute value of voltage is greater in the open-circuit regime.

arXiv comment5 pages, 4 figures

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• The Elasticity of an Electron Liquid
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• Perturbation theory for two-dimensional hydrodynamic plasmons
• Asymmetry-driven plasmon instabilities in confined hydrodynamic electron flows
• Nonlinear Schrodinger equation for a two-dimensional plasma: the analysis of solitons, breathers, and plane wave stability
• Terahertz Radiation from the Dyakonov-Shur Instability of Hydrodynamic Electrons in a Corbino Geometry
• Plasmons and magnetoplasmons in partially bounded two-layer electron systems
• Singularity-enhanced terahertz detection in high-mobility field-effect transistors
• Fully screened two-dimensional magnetoplasmons and rotational gravity shallow water waves in a rectangle
• Plasmon damping in electronically open systems