Plasmon damping in electronically open systems
arXiv:2005.01680 · doi:10.1103/PhysRevLett.125.236801
Abstract
Rapid progress in electrically-controlled plasmonics in solids poses a question about effects of electronic reservoirs on the properties of plasmons. We find that plasmons in electronically open systems [i.e. in (semi)conductors connected to leads] are prone to an additional damping due to charge carrier penetration into contacts and subsequent thermalization. We develop a theory of such lead-induced damping based on kinetic equation with self-consistent electric field, supplemented by microscopic carrier transport at the interfaces. The lifetime of plasmon in electronically open ballistic system appears to be finite, order of conductor length divided by carrier Fermi (thermal) velocity. The reflection loss of plasmon incident on the contact of semi-conductor and perfectly conducting metal also appears to be finite, order of Fermi velocity divided by wave phase velocity. Recent experiments on plasmon-assisted photodetection are discussed in light of the proposed lead-induced damping phenomenon.
arXiv comment5 pages, 4 figures
References in corpus (12)
- Highly confined low-loss plasmons in graphene-boron nitride heterostructures
- Far-field Excitation of Single Graphene Plasmon Cavities with Ultra-compressed Mode-volumes
- Interaction Constants and Dynamic Conductance of a Gated Wire
- Electrical 2π phase control of infrared light in a 350nm footprint using graphene plasmons
- Electric Spaser in the Extreme Quantum Limit
- Probing Nonlocal Effects in Metals with Graphene Plasmons
- Interaction of gated and ungated plasmons in two-dimensional electron systems
- Novel 2D Plasmon Induced by Metal Proximity
- Perturbation theory for two-dimensional hydrodynamic plasmons
- Asymmetry-driven plasmon instabilities in confined hydrodynamic electron flows
- Exact solution for driven oscillations in plasmonic field-effect transistors
- Dyakonov-Shur instability across the ballistic-to-hydrodynamic crossover