Quantum Hall effect in bilayer and multilayer graphenes with finite gate voltage

Abstract

We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in finite-magnetic-field formalism, and observed crossover of integer quantum Hall effect from two independent monolayer type system to strongly coupled bilayer systems by changing the ratio of interlayer hopping energy and the gate voltage. We also discuss the case of multilayer systems with Bernal stacking

4 pages, 3 figures

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