Integer Quantum Hall Effect in Trilayer Graphene
arXiv:1104.1020 · doi:10.1103/PhysRevLett.107.126806
Abstract
The Integer Quantum Hall Effect (IQHE) is a distinctive phase of two-dimensional electronic systems subjected to a perpendicular magnetic field. Thus far, the IQHE has been observed in semiconductor heterostructures and in mono- and bi-layer graphene. Here we report on the IQHE in a new system: trilayer graphene. Experimental data are compared with self-consistent Hartree calculations of the Landau levels for the gated trilayer. The plateau structure in the Hall resistivity determines the stacking order (ABA versus ABC). We find that the IQHE in ABC trilayer graphene is similar to that in the monolayer, except for the absence of a plateau at filling factor v=2. At very low filling factor, the Hall resistance vanishes due to the presence of mixed electron and hole carriers induced by disorder.
5 pages, 4 figures
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Cited by in corpus (53)
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- Networks of ABA and ABC stacked graphene on mica observed by scanning tunneling microscopy
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- Flat Electronic Bands in Long Sequences of Rhombohedral-stacked Multilayer Graphene
- Experimental approval of the extended flat bands and gapped subbands in rhombohedral multilayer graphene
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- Local atomic stacking and symmetry in twisted graphene trilayers
- Stacking-dependent shear modes in trilayer graphene
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- Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene
- New Dirac points and multiple Landau level crossings in biased trilayer graphene
- Multilayer graphenes as a platform for interaction-driven physics and topological superconductivity
- 3D strain in 2D materials: Experimental test in unsupported monolayer graphene under pressure
- Tunable interactions and phase transitions in Dirac materials in a magnetic field
- Hund's Rules for the N=0 Landau Levels of Trilayer Graphene
- Ferromagnetism in ABC-trilayer graphene
- Multilayer graphenes with mixed stacking structure: interplay of Bernal and rhombohedral stacking
- Electrical transport in suspended and double gated trilayer graphene
- Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene
- Evolution and dimensional crossover from the bulk subbands in ABC-stacked graphene to a three-dimensional Dirac cone structure in rhombohedral graphite
- Stacking order, interaction and weak surface magnetism in layered graphene sheets
- High-magnetic-field Tunneling Spectra of ABC-Stacked Trilayer Graphene
- Quantum Hall to charge-density-wave phase transitions in ABC-trilayer graphene
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- Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)
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- Stacking-enriched magneto-transport properties of few-layer graphenes
- Fine structure of the lowest Landau level in suspended trilayer graphene
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- Landau level diagram and the continuous rotational symmetry breaking in trilayer graphene
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- Carrier type modulation in current annealed graphene layers
- Spin- and band-ferromagnetism in trilayer graphene
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- Screening in multilayer graphene
- Imaging Stacking-Dependent Surface Plasmon Polaritons in Trilayer Graphene
- Stacking-order dependence in thermoelectric transport of biased trilayer graphene
- Vacancy induced zero energy modes in graphene stacks: The case of ABC trilayer
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- Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers
- Stability of the k=3 Read-Rezayi state in chiral two-dimensional systems with tunable interactions
- Taming the magnetoresistance anomaly in graphite
- Orbital Lamb shift and mixing of the pseudo-zero-mode Landau levels in ABC-stacked trilayer graphene
- Layer-resolved conductivities in multilayer graphenes
- Numerical studies of the fractional quantum Hall effect in systems with tunable interactions
- Multiband ballistic transport and anisotropic commensurability magnetoresistance in antidot lattices of AB-stacked trilayer graphene
- Interaction-enhanced electron-hole and valley asymmetries in the lowest Landau level of ABA-stacked trilayer graphene