Stacking Faults, Bound States, and Quantum Hall Plateaus in Crystalline Graphite

Abstract

We analyze the electronic properties of a simple stacking defect in Bernal graphite. We show that a bound state forms, which disperses as $|\bfk-\bfK|^3$ in the vicinity of either of the two inequivalent zone corners $\bfK$. In the presence of a strong c-axis magnetic field, this bound state develops a Landau level structure which for low energies behaves as $E\nd_n\propto |n B|^{3/2}$. We show that buried stacking faults have observable consequences for surface spectroscopy, and we discuss the implications for the three-dimensional quantum Hall effect (3DQHE). We also analyze the Landau level structure and chiral surface states of rhombohedral graphite, and show that, when doped, it should exhibit multiple 3DQHE plateaus at modest fields.

19 pages

References in corpus (6)

• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Electronic states and Landau levels in graphene stacks
• Determination of the electronic structure of bilayer graphene from infrared spectroscopy results
• Graphene Physics in Graphite
• Theory of the Three Dimensional Quantum Hall Effect in Graphite
• Integer Quantum Hall Effect in Graphite