Local atomic stacking and symmetry in twisted graphene trilayers
arXiv:2303.09662 · doi:10.1038/s41563-023-01783-y
Abstract
Moiré superlattices formed from twisting trilayers of graphene are an ideal model for studying electronic correlation, and offer several advantages over bilayer analogues, including more robust and tunable superconductivity and a wide range of twist angles associated with flat band formation. Atomic reconstruction, which strongly impacts the electronic structure of twisted graphene structures, has been suggested to play a major role in the relative versatility of superconductivity in trilayers. Here, we exploit an inteferometric 4D-STEM approach to image a wide range of trilayer graphene structures. Our results unveil a considerably different model for moiré lattice relaxation in trilayers than that proposed from previous measurements, informing a thorough understanding of how reconstruction modulates the atomic stacking symmetries crucial for establishing superconductivity and other correlated phases in twisted graphene trilayers.
22 pages, 5 figures
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Cited by in corpus (12)
- Designing Moiré Patterns by Strain
- Moiré Band Engineering in Twisted Trilayer WSe2
- Sliding ferroelectricity in a bulk misfit layer compound (PbS)VS
- Designing Moire Patterns by Shearing
- Correlated states in super-moiré materials with a kernel polynomial quantics tensor cross interpolation algorithm
- Considerations for extracting moiré-level strain from dark field intensities in transmission electron microscopy
- Imaging supermoiré relaxation in helical trilayer graphene
- Strong Correlations and Superconductivity in the Supermoiré Lattice
- Super Moiré Domain Tessellations, Sliding Ferroelectricity, and Reconfigurable Quantum Dot Arrays in Twisted Trilayer Hexagonal Boron Nitride
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