Super Moiré Domain Tessellations, Sliding Ferroelectricity, and Reconfigurable Quantum Dot Arrays in Twisted Trilayer Hexagonal Boron Nitride
arXiv:2504.14925 · doi:10.1103/yfqy-6235
Abstract
At very small twist angles, bilayer moiré systems exhibit characteristic stacking domain patterns, where the moiré length scale is determined solely by the twist angle. In contrast, the additional stacking and twisting degrees of freedom in twisted trilayer systems give rise to richer and more intricate domain tessellations. In twisted trilayer hexagonal boron nitride (TTBN), the interplay between polar and nonpolar domains and their domain walls is shown to result in unconventional responses to external electric fields, including electric-field tunability of the moiré-of-moiré or super moiré pattern--features absent in bilayer counterparts. We demonstrate that at the vertices of super moiré domains, TTBN can support arrays of quantum dots hosting localized quantum harmonic oscillator (QHO) states with diverse spatial symmetries. Futhermore, we show that the shape of the array and the spacing between the localized QHO states can be dynamically reconfigured by electric fields, enabling facile switching between fully isolated and strongly coupled regimes. The local potentials for the quantum dot state are predicted to be sufficiently deep to support a series of QHO states with nonzero angular momentum. This tunability enables control over the transport of quantum dot states and their interdot coupling, facillitating long-range quantum state transfer. Combined with the feasibility of large-scale fabrication of homogeneous twisted trilayer materials, these properties position TTBN as a promising platform for a wide range of quantum technologies.
25 pages, 17 figures, 6 tables
References in corpus (20)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- Quantum Computing
- Semiconductor Spin Qubits
- Quantum error correction below the surface code threshold
- Continuum Model of the Twisted Bilayer
- Moiré heterostructures as a condensed matter quantum simulator
- Universal control of a six-qubit quantum processor in silicon
- Interfacial ferroelectricity in marginally twisted 2D semiconductors
- Programming moiré patterns in 2D materials by bending
- Electron Attraction Mediated by Coulomb Repulsion
- Local atomic stacking and symmetry in twisted graphene trilayers
- Isotope engineering for spin defects in van der Waals materials
- Multi-scale lattice relaxation in general twisted trilayer graphenes
- Ab initio study of lattice dynamics of group IV semiconductors using pseudohybrid functionals for extended Hubbard interactions
- Self-organised quantum dots in marginally twisted MoSe/WSe and MoS/WS bilayers
- Condensation of preformed charge density waves in kagome metals
- Moiré Band Engineering in Twisted Trilayer WSe2
- Ferroelectric response to interlayer shifting and rotations in trilayer hexagonal Boron Nitride
- Moiré flat bands and antiferroelectric domains in lattice relaxed twisted bilayer hexagonal boron nitride under perpendicular electric fields