Vacancy induced zero energy modes in graphene stacks: The case of ABC trilayer
arXiv:1208.6142 · doi:10.1016/j.ssc.2012.04.027
Abstract
The zero energy modes induced by vacancies in ABC stacked trilayer graphene are investigated. Depending on the position of the vacancy, a new zero energy solution is realised, different from those obtained in multilayer compounds with Bernal stacking. The electronic modification induced in the sample by the new vacancy states is characterised by computing the local density of states and their localisation properties are studied by the inverse participation ratio. We also analyse the situation in the presence of a gap in the spectrum due to a perpendicular electric field.
arXiv comment6 pages, 4 figures Published in special issue: Exploring Graphene, Recent Research Advances
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- Electronic and structural properties of vacancies and hydrogen adsorbates on trilayer graphene
- Large tunable intrinsic gap in rhombohedral-stacked tetralayer graphene