Resonant tunneling in disordered borophene nanoribbons with line defects

Abstract

Very recently, borophene has been attracting extensive and ongoing interest as the new wonder material with structural polymorphism and superior attributes, showing that the structural imperfection of line defects (LDs) occurs widely at the interface between ${\nu }_{1/5}$ (${\chi }_3$) and ${\nu }_{1/6}$ (${\beta }_{12}$) boron sheets. Motivated by these experiments, here we present a theoretical study of electron transport through two-terminal disordered borophene nanoribbons (BNRs) with random distribution of LDs. Our results indicate that LDs could strongly affect the electron transport properties of BNRs. In the absence of LDs, both ${\nu }_{1/5}$ and ${\nu }_{1/6}$ BNRs exhibit metallic behavior, in agreement with experiments. While in the presence of LDs, the overall electron transport ability is dramatically decreased, but some resonant peaks of conductance quantum can be found in the transmission spectrum of any disordered BNR with arbitrary arrangement of LDs. These disordered BNRs exhibit metal-insulator transition by varying nanoribbon width with tunable transmission gap in the insulating regime. Furthermore, the bond currents present fringe patterns and two evolution phenomena of resonant peaks are revealed for disordered BNRs with different widths. These results may help for understanding structure-property relationships and designing LD-based nanodevices.

Comments are welcome; 6 pages; 4 figures

References in corpus (16)

• Energy Band Gap Engineering of Graphene Nanoribbons
• Energy Gaps in Graphene Nanoribbons
• Novel Precursors for Boron Nanotubes: The Competition of Two-Center and Three-Center Bonding in Boron Sheets
• Peculiar Width Dependence of the Electronic Property of Carbon Nanoribbons
• Graphene valley filter using a line defect
• Dirac fermions in borophene
• Elasticity, Flexibility and Ideal Strength of Borophenes
• Quantized Transport in Graphene p-n Junctions in Magnetic Field
• Colloquium: Physical properties of group-IV monochalcogenide monolayers
• One-dimensional quantum channel in a graphene line defect
• Nanoscale probing of image-potential states and electron transfer doping in borophene polymorphs
• Spin-dependent electron transport along hairpin-like DNA molecules
• Spontaneous time reversal symmetry breaking at individual grain boundaries in graphene
• Role of line defect in the bandgap and transport properties of silicene nanoribbons
• Zero Modes on Zero-Angle Grain Boundaries in Graphene
• Rippling of two-dimensional materials by line defects