Intervalley scattering of graphene massless Dirac fermions at 3-periodic grain boundaries
arXiv:1607.03209 · doi:10.1103/PhysRevB.94.134201
Abstract
We study how low-energy charge carriers scatter off periodic and linear graphene grain boundaries oriented along the zigzag direction with a periodicity three times greater than that of pristine graphene. These defects map the two Dirac points into the same position, and thus allow for intervalley scattering to occur. Starting from graphene's first-neighbor tight-binding model we show how can we compute the boundary condition seen by graphene's massless Dirac fermions at such grain boundaries. We illustrate this procedure for the 3-periodic pentagon-only grain boundary, and then work out the low-energy electronic scattering off this linear defect. We also compute the effective generalized potential seen by the Dirac fermions at the grain boundary region.
arXiv comment13 pages, 5 figures
References in corpus (17)
- Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
- 30 inch Roll-Based Production of High-Quality Graphene Films for Flexible Transparent Electrodes
- Imaging Grains and Grain Boundaries in Single-Layer Graphene: An Atomic Patchwork Quilt
- Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
- Electronic transport in polycrystalline graphene
- Anomalous Strength Characteristics of Tilt Grain Boundaries in Graphene
- Polycrystalline graphene and other two-dimensional materials
- Graphene valley filter using a line defect
- Atomic-scale electron-beam sculpting of defect-free graphene nanostructures
- Charge Transport in Polycrystalline Graphene: Challenges and Opportunities
- Controlled Growth of a Line Defect in Graphene and Implications for Gate-Tunable Valley Filtering
- Revealing the grain structure of graphene grown by chemical vapor deposition
- Electronic transport across linear defects in graphene
- Scattering by linear defects in graphene: a continuum approach
- Transport properties through graphene grain boundaries: strain effects versus lattice symmetry
- Scattering by linear defects in graphene: a tight-binding approach
- Probing barrier transmission in ballistic graphene
Cited by in corpus (7)
- Electrical band flattening, valley flux, and superconductivity in twisted trilayer graphene
- Dirac Fermion kinetics in three-dimensionally curved graphene
- Two-dimensional Dirac operators with general -shell interactions supported on a straight line
- Floquet Graphene Antidot Lattices
- Valley to charge current conversion in graphene grain boundaries
- Scattering of a Dirac particle by a Berry phase domain wall
- Quantum geometric scattering of a Dirac particle by a Berry curvature domain wall