Scattering by linear defects in graphene: a tight-binding approach

Abstract

We develop an analytical scattering formalism for computing the transmittance through periodic defect lines within the tight-binding model of graphene. We first illustrate the method with a relatively simple case, the pentagon-only defect line. Afterwards, more complex defect lines are treated, namely the zz(558) and the zz(5757) ones. The formalism developed, only uses simple tight-binding concepts, reducing the problem to matrix manipulations which can be easily worked out by any computational algebraic calculator.

36 pages, 15 figures

References in corpus (8)

• Chiral tunneling and the Klein paradox in graphene
• Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
• Colloquium: The transport properties of graphene: An introduction
• Topological Defects in Graphene: Dislocations and Grain Boundaries
• Graphene valley filter using a line defect
• Conductance calculations for quantum wires and interfaces: mode matching and Green functions
• Revealing the grain structure of graphene grown by chemical vapor deposition
• Scattering by linear defects in graphene: a continuum approach

Cited by in corpus (8)

• Improvements on non-equilibrium and transport Green function techniques: the next-generation transiesta
• Electronic transport across linear defects in graphene
• Two-dimensional Dirac operators with general $\delta$-shell interactions supported on a straight line
• Intervalley scattering of graphene massless Dirac fermions at 3-periodic grain boundaries
• Zero Modes on Zero-Angle Grain Boundaries in Graphene
• Sub- and supercritical defect scattering in Schrödinger chains with higher-order hopping
• Valley to charge current conversion in graphene grain boundaries
• Scattering of a Dirac particle by a Berry phase domain wall