Nonlinear Response of Bilayer Graphene at Terahertz Frequencies
arXiv:1608.04343 · doi:10.1103/PhysRevB.94.235402
Abstract
A density-matrix formalism within the length gauge is developed for the purpose of calculating the nonlinear response of intrinsic bilayer graphene at terahertz frequencies. Employing a tight-binding model, we find that interplay between the interband and intraband dynamics leads to strong harmonic generation at moderate field amplitudes. Specifically, we find that at low temperature (10 K), the reflected field of undoped suspended bilayer graphene exhibits a third harmonic amplitude that is 30% of the fundamental in the reflected field for an incident 1 THz single-cycle pulse with a field amplitude of 1.5 kV/cm. More interestingly, we find that as the central frequency of the incident radiation is increased, the third harmonic amplitude also increases; reaching a maximum of 53% for an incident frequency of 2 THz and amplitude of 2.5 kV/cm.
11 pages, 9 figures
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Cited by in corpus (8)
- Semiconductor-Bloch Formalism: Derivation and Application to High-Harmonic Generation from Dirac Fermions
- Edge photocurrent driven by THz electric field in bi-layer graphene
- Valley-polarization in biased bilayer graphene using circularly polarized light
- Berry curvature and shift vector effects at high-order wave mixing in biased bilayer graphene
- Third Harmonic THz Generation from Graphene in a Parallel-Plate Waveguide
- The effects of microscopic scattering on terahertz third harmonic generation in monolayer graphene
- Pump-induced terahertz anisotropy in bilayer graphene
- Band Geometry Induced Third-Harmonic Generation