Topological Flat Bands in Graphene Super-moiré Lattices

Abstract

Moiré-pattern based potential engineering has become an important way to explore exotic physics in a variety of two-dimensional condensed matter systems. While these potentials have induced correlated phenomena in almost all commonly studied 2D materials, monolayer graphene has remained an exception. We demonstrate theoretically that a single layer of graphene, when placed between two bulk boron nitride crystal substrates with the appropriate twist angles can support a robust topological ultra-flat band emerging from the second hole band. This is one of the simplest platforms to design and exploit topological flat bands.

References in corpus (14)

• The electronic properties of graphene
• Fractional Chern insulators in magic-angle twisted bilayer graphene
• Origin of band gaps in graphene on hexagonal boron nitride
• Electronic properties of graphene hexagonal boron nitride moiré superlattice
• Stability of boron nitride bilayers: Ground state energies, interlayer distances, and tight-binding description
• Evidence of Flat Bands and Correlated States in Buckled Graphene Superlattices
• Superconductivity and strong interactions in a tunable moiré quasiperiodic crystal
• New generation of moiré superlattices in doubly aligned hBN/graphene/hBN heterostructures
• Spontaneous Strains and Gap in Graphene on Boron Nitride
• Composite super-moiré lattices in double aligned graphene heterostructures
• Moiré band model and band gaps of graphene on hexagonal boron nitride
• Double moiré with a twist: super-moiré in encapsulated graphene
• Controlled alignment of supermoiré lattice in double-aligned graphene heterostructures
• Kagomé network of chiral miniband-edge states in double-aligned graphene-hexagonal boron nitride structures

Cited by in corpus (8)

• Analytical Model for Atomic Relaxation in Twisted Moiré Materials
• Exact Solutions Disentangle Higher-Order Topology in 2D Non-Hermitian Lattices
• Floquet engineering of topological phase transitions in quantum spin Hall $\alpha$-$T_3$ system
• Higher-order Bragg gaps in the electronic band structure of bilayer graphene renormalized by recursive supermoiré potential
• Pressure-Driven Moiré Potential Enhancement and Tertiary Gap Opening in Graphene/h-BN Heterostructure
• Magnetic Bloch States at Integer Flux Quanta Induced by Super-moiré Potential in Graphene Aligned with Twisted Boron Nitride
• Orbital moiré and quadrupolar triple-q physics in a triangular lattice
• Band structure and optical response of Kekulé-modulated $\alpha -{\mathcal{T}}_3$ model