Controlled alignment of supermoiré lattice in double-aligned graphene heterostructures
arXiv:2301.12124 · doi:10.1038/s41467-023-39893-5
Abstract
The supermoiré lattice, built by stacking two moiré patterns, provides a platform for creating flat mini-bands and studying electron correlations. An ultimate challenge in assembling a graphene supermoiré lattice is in the deterministic control of its rotational alignment, which is made highly aleatory due to the random nature of the edge chirality and crystal symmetry of each component layer. Employing the so-called golden rule of three, here we present an experimental strategy to overcome this challenge and realize the controlled alignment of double-aligned hBN/graphene/hBN supermoiré lattice, where graphene is precisely aligned with both top hBN and bottom hBN. Remarkably, we find that the crystallographic edge of neighboring graphite can be used to better guide the stacking alignment, as demonstrated by the controlled production of 20 moiré samples with an accuracy better than 0.2 degree. Finally, we extend our technique to other strongly correlated electron systems, such as low-angle twisted bilayer graphene and ABC-stacked trilayer graphene, providing a strategy for flat-band engineering in these moiré materials.
arXiv comment20 pages, 4 figures
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Cited by in corpus (6)
- Topological Flat Bands in Graphene Super-moiré Lattices
- Pressure-Driven Moiré Potential Enhancement and Tertiary Gap Opening in Graphene/h-BN Heterostructure
- Magnetic Bloch States at Integer Flux Quanta Induced by Super-moiré Potential in Graphene Aligned with Twisted Boron Nitride
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- Characterization of a graphene-hBN superlattice field effect transistor
- Microscopic theory for electron-phonon coupling in twisted bilayer graphene