Fractional quantum anomalous Hall effect in rhombohedral multilayer graphene with a strong displacement field
arXiv:2408.05139 · doi:10.1103/PhysRevB.111.075130
Abstract
We investigate the fractional quantum anomalous Hall (FQAH) effect in rhombohedral multilayer graphene (RnG) in the presence of a strong applied displacement field. We first introduce the interacting model of RnG, which includes the noninteracting continuum model and the many-body Coulomb interaction. We then discuss the integer quantum anomalous Hall (IQAH) effect in RnG and the role of the Hartree-Fock approach in understanding its appearance. Next, we explore the FQAH effect in RnG for -- using a combination of constrained Hartree-Fock and exact diagonalization methods. We characterize the stability of the FQAH phase by the size of the FQAH gap and find that RnG generally has a stable FQAH phase, although the required displacement field varies significantly among different values. Our work establishes the theoretical universality of both IQAH and FQAH in RnG.
7 pages, 6 figures. Comments are welcome
References in corpus (24)
- High temperature fractional quantum Hall states
- Fractional quantum Hall states at zero magnetic field
- Nearly-flat bands with nontrivial topology
- Fractional quantum Hall effect in the absence of Landau levels
- Superconductivity in rhombohedral trilayer graphene
- Band Structure of ABC-Stacked Graphene Trilayers
- Electronic properties of graphene hexagonal boron nitride moiré superlattice
- Correlated Insulator and Chern Insulators in Pentalayer Rhombohedral Stacked Graphene
- Orbital Multiferroicity in Pentalayer Rhombohedral Graphene
- Large Quantum Anomalous Hall Effect in Spin-Orbit Proximitized Rhombohedral Graphene
- Anomalous Hall Crystals in Rhombohedral Multilayer Graphene I: Interaction-Driven Chern Bands and Fractional Quantum Hall States at Zero Magnetic Field
- Theory of quantum anomalous Hall phases in pentalayer rhombohedral graphene moiré structures
- Tunable superconductivity in electron- and hole-doped Bernal bilayer graphene
- Theory of fractional Chern insulator states in pentalayer graphene moiré superlattice
- Stability of Anomalous Hall Crystals in multilayer rhombohedral graphene
- Intervalley coherence and intrinsic spin-orbit coupling in rhombohedral trilayer graphene
- Anomalous Hall Crystals in Rhombohedral Multilayer Graphene II: General Mechanism and a Minimal Model
- Parent Berry curvature and the ideal anomalous Hall crystal
- Electrical control of spin and valley in spin-orbit coupled graphene multilayers
- Sublattice structure and topology in spontaneously crystallized electronic states
- Ferroelectric and anomalous quantum Hall states in bare rhombohedral trilayer graphene
- Quantum phases of disordered flatband lattice fractional quantum Hall systems
- Self-consistent theory for the fractional quantum anomalous Hall effect in rhombohedral pentalayer graphene
- Integer and fractional quantum anomalous Hall effects in pentalayer graphene
Cited by in corpus (6)
- Correlated phases in rhombohedral multilayer graphene
- Ordering the topological order in the fractional quantum Hall effect
- Ideal quantum geometry of the surface states of rhombohedral graphite and its effects on the surface superconductivity
- Various electronic crystal phases in rhombohedral graphene multilayers
- Elastic Response and Instabilities of Anomalous Hall Crystals
- Time-dependent conserved operators for autonomous systems and quantization of resistance