Electrical control of spin and valley in spin-orbit coupled graphene multilayers
arXiv:2303.04855 · doi:10.1103/PhysRevLett.132.116504
Abstract
Electrical control of magnetism has been a major techonogical pursuit of the spintronics community, owing to its far-reaching implications for data storage and transmission. Here, we propose and analyze a new mechanism for electrical switching of isospin, using chiral-stacked graphene multilayers, such as bernal bilayer graphene or rhombohedral trilayer graphene, encapsulated by transition metal dichalcogenide (TMD) substrates. Leveraging the proximity-induced spin-orbit coupling from the TMD, we demonstrate electrical switching of correlation-induced spin and/or valley polarization, by reversing a perpendicular displacement field or the chemical potential. We substantiate our proposal with both analytical arguments and self-consistent Hartree-Fock numerics. Finally, we illustrate how the relative alignment of the TMDs, together with the top and bottom gate voltages, can be used to selectively switch distinct isospin flavors, putting forward correlated van der Waals heterostructures as a promising platform for spintronics and valleytronics.
5 pages, 4 figures. (v2) Significant re-write correcting the magnetic moment, SM added. (v3) Fig 1 improved
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- Self-consistent theory for the fractional quantum anomalous Hall effect in rhombohedral pentalayer graphene
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- Multiferroicity and Topology in Twisted Transition Metal Dichalcogenides
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- Quarter-Metal Phases in Multilayer Graphene: Ising-XY and Annular Lifshitz Transitions
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- Promoting and imaging intervalley coherent order in rhombohedral tetralayer graphene on MoS2
- Visualization of intervalley coherent phase in PtSe2/HOPG heterojunction
- Topological frequency conversion in rhombohedral multilayer graphene
- Spin-orbital magnetism in moiré Wigner molecules
- Orbital Longitudinal Magneto-electric Coupling in Multilayer Graphene