Moiré effects in graphene--hBN heterostructures

Abstract

Encapsulating graphene in hexagonal Boron Nitride has several advantages: the highest mobilities reported to date are achieved in this way, and precise nanostructuring of graphene becomes feasible through the protective hBN layers. Nevertheless, subtle effects may arise due to the differing lattice constants of graphene and hBN, and due to the twist angle between the graphene and hBN lattices. Here, we use a recently developed model which allows us to perform band structure and magnetotransport calculations of such structures, and show that with a proper account of the moiré physics an excellent agreement with experiments can be achieved, even for complicated structures such as disordered graphene, or antidot lattices on a monolayer hBN with a relative twist angle. Calculations of this kind are essential to a quantitative modeling of twistronic devices.

References in corpus (13)

• The electronic properties of graphene
• Lattice relaxation and energy band modulation in twisted bilayer graphenes
• Graphene Antidot Lattices - Designed Defects and Spin Qubits
• Origin of band gaps in graphene on hexagonal boron nitride
• Conductance quantization and transport gap in disordered graphene nanoribbons
• Edge disorder induced Anderson localization and conduction gap in graphene nanoribbons
• Electronic properties of graphene hexagonal boron nitride moiré superlattice
• Electronic properties of graphene antidot lattices
• Moir{é} patterns as a probe of interplanar interactions: graphene on h-BN
• New generation of moiré superlattices in doubly aligned hBN/graphene/hBN heterostructures
• Composite super-moiré lattices in double aligned graphene heterostructures
• Double moiré with a twist: super-moiré in encapsulated graphene
• Electronic transport in disordered graphene antidot lattice devices