Determination of interatomic coupling between two-dimensional crystals using angle-resolved photoemission spectroscopy
arXiv:2007.08946 · doi:10.1038/s41467-020-17412-0
Abstract
Lack of directional bonding between two-dimensional crystals like graphene or monolayer transition metal dichalcogenides provides unusual freedom in selection of components for vertical van der Waals heterostructures. However, even for identical layers, their stacking, in particular the relative angle between their crystallographic directions, modifies properties of the structure. We demonstrate that the interatomic coupling between two two-dimensional crystals can be determined from angle-resolved photoemission spectra of a trilayer structure with one aligned and one twisted interface. Each of the interfaces provides complementary information and together they enable self-consistent determination of the coupling. We parametrize interatomic coupling for carbon atoms by studying twisted trilayer graphene and show that the result can be applied to structures with different twists and number of layers. Our approach demonstrates how to extract fundamental information about interlayer coupling in a stack of two-dimensional crystals and can be applied to many other van der Waals interfaces.
This is a post-peer-review, pre-copyedit version of an article published in Nature Communications. The final authenticated version is available online at: http://dx.doi.org/10.1038/s41467-020-17412-0
References in corpus (14)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- 2D materials and van der Waals heterostructures
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
- Resonantly hybridised excitons in moiré superlattices in van der Waals heterostructures
- Evolution of Interlayer Coupling in Twisted MoS2 Bilayers
- Lattice relaxation and energy band modulation in twisted bilayer graphenes
- Electronic properties of single-layer and multilayer transition metal dichalcogenides ( Mo, W and S, Se)
- Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene
- Characterization of graphene through anisotropy of constant-energy maps in angle-resolved photoemission
- Interlayer interaction in general incommensurate atomic layers
- Interaction effects and superconductivity signatures in twisted double-bilayer WSe
- Determination of interatomic coupling between two-dimensional crystals using angle-resolved photoemission spectroscopy