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25 papers
Unveiling the origin of unconventional moire ferroelectricity
Ruirui Niu, Zhuoxian Li, Xiangyan Han +13
Interfacial ferroelectricity emerges in heterostructures consisting of nonpolar van der Waals (vdW) layers, greatly expanding the scope of two dimensional ferroelectrics. In partic…
Observation of Γ-valley moiré bands and emergent hexagonal lattice in twisted transition metal dichalcogenides
Ding Pei, Binbin Wang, Zishu Zhou +19
Twisted van der Waals heterostructures have recently been proposed as a condensed-matter platform for realizing controllable quantum models due to the low-energy moiré bands with s…
Anisotropic Infrared Response and Orientation-dependent Strain-tuning of the Electronic Structure in Nb2SiTe4
Fanjie Wang, Yonggang Xu, Lei Mu +6
Two-dimensional materials with tunable in-plane anisotropic infrared response promise versatile applications in polarized photodetectors and field-effect transistors. Black phospho…
Observation of Dimension-Crossover of a Tunable 1D Dirac Fermion in Topological Semimetal NbSiTe
Jing Zhang, Yangyang Lv, Xiaolong Feng +11
Condensed matter systems in low dimensions exhibit emergent physics that does not exist in three dimensions. When electrons are confined to one dimension (1D), some significant ele…
Evidences for the exciton gas phase and its condensation in monolayer 1T-ZrTe2
Yekai Song, Chunjing Jia, Hongyu Xiong +15
The excitonic insulator (EI) is a Bose-Einstein condensation (BEC) of excitons bound by electron-hole interaction in a solid, which could support high-temperature BEC transition. T…
Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism
Zhengxian Li, Kui Huang, Deping Guo +15
The weak antilocalization (WAL) effect is known as a quantum correction to the classical conductivity, which never appeared in two-dimensional magnets. In this work, we reported th…
Detecting Band Profiles of Devices with Conductive Atomic Force Microscopy
Ranran Li, Takashi Taniguchi, Kenji Watanabe +1
Band profiles of electronic devices are of fundamental importance in determining their properties. A technique that can map the band profile of both the interior and edges of a dev…
Interlayer Decoupling in 30° Twisted Bilayer Graphene Quasicrystal
Bing Deng, Binbin Wang, Ning Li +8
Stacking order has strong influence on the coupling between the two layers of twisted bilayer graphene (BLG), which in turn determines its physical properties. Here, we report the…
NbSiTe: A Stable Narrow-Gap Two-Dimensional Material with Ambipolar Transport and Mid-Infrared Response
Mingxing Zhao, Wei Xia, Yang Wang +5
Two-dimensional (2D) materials with narrow band gaps (~0.3 eV) are of great importance for realizing ambipolar transistors and mid-infrared (MIR) detection. However, most of the 2D…
Isotropic charge screening of the anisotropic black phosphorus revealed by potassium adatoms
Zhen Tian, Yu Gan, Taiming Zhang +4
Black phosphorus has attracted great research interest due to its numerous applications in electronic devices, optoelectronic devices, energy storages and so on. Compared with the…
Systematic investigation of electrical contact barriers between different electrode metals and layered GeSe
Ranran Li, Wei Xia, Yanfeng Guo +1
For electronic and photoelectronic devices based on GeSe, an emergent two dimensional monochalcogenide with many exciting properties predicted, good electrical contacts are of grea…
Continuous Tensor Network States for Quantum Fields
Antoine Tilloy, J. Ignacio Cirac
We introduce a new class of states for bosonic quantum fields which extend tensor network states to the continuum and generalize continuous matrix product states (cMPS) to spatial…
Lateral heterostructures formed by thermally converting n-type SnSe2 to p-type SnSe
Zhen Tian, Mingxing Zhao, Xiongxiong Xue +5
Different two-dimensional materials, when combined together to form heterostructures, can exhibit exciting properties that do not exist in individual components. Therefore, intensi…
2D SnS: a phosphorene analogue with strong in-plane electronic anisotropy
Zhen Tian, Chenglei Guo, Mingxing Zhao +2
We study the anisotropic electronic properties of 2D SnS, an analogue of phosphorene, grown by physical vapor transport. With transmission electron microscope and polarized Raman s…
Field-effect transistors of high-mobility few-layer SnSe
Chenglei Guo, Zhen Tian, Yanjun Xiao +2
We report the transport properties of mechanically exfoliated few-layer SnSe flakes, whose mobility is found with four probe measurements to be ~ 85 cmVs…
Giant Frictional Drag in Double Bilayer Graphene Heterostructures
Kayoung Lee, Jiamin Xue, David C. Dillen +3
We study the frictional drag between carriers in two bilayer graphene flakes separated by a 2 5 nm thick hexagonal boron nitride dielectric. At temperatures () lower than $\…
Scanning gate microscopy of ultra clean carbon nanotube quantum dots
Jiamin Xue, Rohan Dhall, Stephen B. Cronin +1
We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric h…
Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
Babak Fallahazad, Kayoung Lee, Sangwoo Kang +10
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphen…
Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures
Matthew Yankowitz, Stefano Larentis, Kyounghwan Kim +8
The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bond…
Graphene on Hexagonal Boron Nitride
Matthew Yankowitz, Jiamin Xue, Brian J. LeRoy
The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graph…
Chemical Potential and Quantum Hall Ferromagnetism in Bilayer Graphene
Kayoung Lee, Babak Fallahazad, Jiamin Xue +5
Bilayer graphene has a unique electronic structure influenced by a complex interplay between various degrees of freedom. We probe its chemical potential using double bilayer graphe…
Berry phase and the unconventional quantum Hall effect in graphene
Jiamin Xue
The Berry phase of π in graphene is derived in a pedagogical way. The ambiguity of how to calculate this value properly is clarified. Its connection with the unconventional quantum…
Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
Matthew Yankowitz, Jiamin Xue, Daniel Cormode +6
The Schrödinger equation dictates that the propagation of nearly free electrons through a weak periodic potential results in the opening of band gaps near points of the reciprocal…
Long wavelength local density of states oscillations near graphene step edges
Jiamin Xue, Javier Sanchez-Yamagishi, K. Watanabe +3
Using scanning tunneling microscopy and spectroscopy, we have studied the local density of states (LDOS) of graphene over step edges in boron nitride. Long wavelength oscillations…