activity
20082026
most citedHot Carrier-Assisted Intrinsic Photoresponse in Graphene

1.1k citations · 3k across the 14 of their papers we have counts for

collaborators

14 papers

cond-mat.mes-hall2026

Probing the Potential Profile of Twisted Bilayer Graphene via Fabry-Pérot Interference

Curtis McDowell, Alina Mreńca-Kolasińska, Kenji Watanabe +3

We use Fabry-Pérot interference to probe the internal potential profile of large-angle twisted bilayer graphene. We trace anomalous resistance oscillations in the nominally unipola…

cond-mat.mes-hall2024★ 4 cited

Probing the Anisotropic Fermi Surface in Tetralayer Graphene via Transverse Magnetic Focusing

Illias Klanurak, Kenji Watanabe, Takashi Taniguchi +2

Bernal-stacked tetralayer graphene (4LG) exhibits intriguing low-energy properties, featuring two massive subbands and showcasing diverse features of topologically distinct, anisot…

cond-mat.mes-hall2022★ 1 cited

Magnetoconductance Oscillations in Electron-hole Hybridization Gaps and Valley Splittings in Tetralayer Graphene

Illias Klanurak, Kenji Watanabe, Takashi Taniguchi +2

We investigate magnetotransport on Bernal-stacked tetralayer graphene whose band structure consists of two massive subbands with different effective masses. Under a finite displace…

cond-mat.mes-hall2016★ 37 cited

Landau level splittings, phase transitions, and non-uniform charge distribution in trilayer graphene

Leonardo C. Campos, Thiti Taychatanapat, Maksym Serbyn +5

We report on magneto-transport studies of dual-gated, Bernal-stacked trilayer graphene (TLG) encapsulated in boron nitride crystals. We observe a quantum Hall effect staircase whic…

cond-mat.mes-hall2015★ 91 cited

Conductance oscillations induced by ballistic snake states in a graphene heterojunction

Thiti Taychatanapat, Jun You Tan, Yuting Yeo +3

The realization of p-n junctions in graphene, combined with the gapless and chiral nature of its massless Dirac fermions has led to the observation of many intriguing phenomena suc…

cond-mat.mes-hall2014★ 556 cited

Spin-Orbit Proximity Effect in Graphene

Ahmet Avsar, Jun You Tan, Jayakumar Balakrishnan +9

The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptional…

cond-mat.mes-hall2014★ 74 cited

Electronic transport in graphene-based heterostructures

J. Y. Tan, A. Avsar, J. Balakrishnan +8

While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (…

cond-mat.mes-hall2013★ 193 cited

Electrically tunable transverse magnetic focusing in graphene

Thiti Taychatanapat, Kenji Watanabe, Takashi Taniguchi +1

Electrons in a periodic lattice can propagate without scattering for macroscopic distances despite the presence of the non-uniform Coulomb potential due to the nuclei. Such ballist…

cond-mat.mes-hall2011★ 156 cited

Quantum Hall Effect, Screening and Layer-Polarized Insulating States in Twisted Bilayer Graphene

Javier D. Sanchez-Yamagishi, Thiti Taychatanapat, Kenji Watanabe +3

We investigate electronic transport in dual-gated twisted bilayer graphene. Despite the sub-nanometer proximity between the layers, we identify independent contributions to the mag…

cond-mat.mes-hall2011★ 195 cited

BN/Graphene/BN Transistors for RF Applications

Han Wang, Thiti Taychatanapat, Allen Hsu +4

In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even w…

cond-mat.mes-hall2011★ 1.1k cited

Hot Carrier-Assisted Intrinsic Photoresponse in Graphene

Nathaniel M. Gabor, Justin C. W. Song, Qiong Ma +6

Graphene is a new material showing high promise in optoelectronics, photonics, and energy-harvesting applications. However, the underlying physical mechanism of optoelectronic resp…

cond-mat.mes-hall2011★ 269 cited

Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene

Thiti Taychatanapat, Kenji Watanabe, Takashi Taniguchi +1

We investigate electronic transport in high mobility (\textgreater 100,000 cm/Vs) trilayer graphene devices on hexagonal boron nitride, which enables the observation of…

cond-mat.mes-hall2010★ 236 cited

Electronic Transport in Dual-gated Bilayer Graphene at Large Displacement Fields

Thiti Taychatanapat, Pablo Jarillo-Herrero

We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we obse…

cond-mat.mes-hall2008★ 147 cited

Relaxation and Dephasing in a Two-electron 13C Nanotube Double Quantum Dot

H. O. H. Churchill, F. Kuemmeth, J. W. Harlow +7

We use charge sensing of Pauli blockade (including spin and isospin) in a two-electron 13C nanotube double quantum dot to measure relaxation and dephasing times. The relaxation tim…