195 citations · 295 across the 3 of their papers we have counts for
3 papers
physics.app-ph2018★ 30 cited
MOVPE growth of N-polar AlN on 4H-SiC: effect of substrate miscut on layer quality
J. Lemettinen, H. Okumura, I. Kim +3
We present the effect of miscut angle of SiC substrates on N-polar AlN growth. The N-polar AlN layers were grown on C-face 4H-SiC substrates with a miscut towards <-1100> by metal-…
cond-mat.mtrl-sci2013★ 70 cited
Large-scale 2D Electronics based on Single-layer MoS2 Grown by Chemical Vapor Deposition
Han Wang, Lili Yu, Yi-Hsien Lee +8
2D nanoelectronics based on single-layer MoS2 offers great advantages for both conventional and ubiquitous applications. This paper discusses the large-scale CVD growth of single-l…
cond-mat.mes-hall2011★ 195 cited
BN/Graphene/BN Transistors for RF Applications
Han Wang, Thiti Taychatanapat, Allen Hsu +4
In this letter, we demonstrate the first BN/Graphene/BN field effect transistor for RF applications. The BN/Graphene/BN structure can preserve the high mobility of graphene, even w…