1.1k citations · 1.8k across the 6 of their papers we have counts for
6 papers
High-frequency performance of scaled carbon nanotube array field-effect transistors
Mathias Steiner, Michael Engel, Yu-Ming Lin +10
We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanot…
High-frequency performance of graphene field effect transistors with saturating IV-characteristics
I. Meric, C. R. Dean, S. -J. Han +4
High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax val…
Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors
Christos Dimitrakopoulos, Yu-Ming Lin, Alfred Grill +12
Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated,…
Dual Gate Graphene FETs with fT of 50 GHz
Yu-Ming Lin, Hsin-Ying Chiu, Keith A. Jenkins +3
A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic doping. With a carrier mobilit…
Utilization of a Buffered Dielectric to Achieve High Field-Effect Carrier Mobility in Graphene Transistors
Damon B. Farmer, Hsin-Ying Chiu, Yu-Ming Lin +3
We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does…
Operation of Graphene Transistors at GHz Frequencies
Yu-Ming Lin, Keith A. Jenkins, Alberto Valdes-Garcia +3
Top-gated graphene transistors operating at high frequencies (GHz) have been fabricated and their characteristics analyzed. The measured intrinsic current gain shows an ideal 1/f f…