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cond-mat.mes-hall2011
High-frequency performance of graphene field effect transistors with saturating IV-characteristics
I. Meric, C. R. Dean, S. -J. Han +4
High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax val…
cond-mat.mes-hall2009★ 135 cited
Dual Gate Graphene FETs with fT of 50 GHz
Yu-Ming Lin, Hsin-Ying Chiu, Keith A. Jenkins +3
A dual-gate graphene field-effect transistors is presented, which shows improved RF performance by reducing the access resistance using electrostatic doping. With a carrier mobilit…