Ultimate RF Performance Potential of Carbon Electronics

Abstract

Carbon electronics based on carbon nanotube array field-effect transistors (AFETs) and 2-dimensional graphene field-effect transistors (GFETs) have recently attracted significant attention for potential RF applications. Here, we explore the ultimate RF performance potential for these two unique devices using semi-classical ballistic transport simulations. It is shown that the intrinsic current-gain and power-gain cutoff frequencies (fT and fMAX) above 1 THz should be possible in both AFETs and GFETs. Thus, both devices could deliver higher cut-off frequencies than traditional semiconductors such as Si and III-V's. In the case of AFETs, we show that their RF operation is not sensitive to the diameter variation of semiconducting tubes and the presence of metallic tubes in the channel. The ultimate fT and fMAX values in AFETs are observed to be higher than that in GFETs. The optimum device biasing conditions for AFETs require smaller biasing currents, and thus, lower power dissipation compared to GFETs. The degradation in high-frequency performance in the presence of external parasitics is also seen to be lower in AFETs compared to GFETs.

12 pages, 11 figures, 2 tables

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• Contact-induced negative differential resistance in short-channel graphene FETs
• Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions
• Terahertz detection mechanism and contact capacitance of individual metallic single-walled carbon nanotubes
• Large Scale Integration of Graphene Transistors for Potential Applications in the Back End of the Line
• Asymmetric Two-Terminal Graphene Detector for Broadband Radiofrequency Heterodyne- and Self-Mixing
• Radio frequency performance projection and stability trade-off of h-BN encapsulated graphene field-effect transistors
• Exploiting negative differential resistance in monolayer graphene FETs for high voltage gains
• Semianalytical quantum model for graphene field-effect transistors