Graphene field-effect transistors based on boron nitride gate dielectrics

Abstract

Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current saturation down to 500 nm channel lengths with intrinsic transconductance values above 400 mS/mm. The work demonstrates the favorable properties of using h-BN as a gate dielectric for graphene FETs.

4 pages, 8 figures

References in corpus (3)

• Ultrahigh electron mobility in suspended graphene
• Boron nitride substrates for high-quality graphene electronics
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2

Cited by in corpus (14)

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• Semimetals for high performance photodetection
• Robust Superlubricity in Graphene/h-BN Heterojunctions
• Ultimate RF Performance Potential of Carbon Electronics
• Explicit drain-current model of graphene field-effect transistors targeting analog and radio-frequency applications
• Hofstadter Topology: Non-crystalline Topological Materials at High Flux
• A Comprehensive Graphene FET Model for Circuit Design
• Strain-tunable band gap in graphene/h-BN hetero-bilayer
• Theoretical analysis of high-field transport in graphene on a substrate
• All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts
• Measuring the Local Twist Angle and Layer Arrangement in Van der Waals Heterostructures
• Single to Double Hump Transition in the Equilibrium Distribution Function of Relativistic Particles
• Static Non-linearity in Graphene Field Effect Transistors
• Inelastic Phonon Scattering in Graphene FETs