7.1k citations · 7.7k across the 7 of their papers we have counts for
7 papers
High-Speed Electro-Optic Modulator Integrated with Graphene-Boron Nitride Heterostructure and Photonic Crystal Nanocavity
Yuanda Gao, Ren-Jye Shiue, Xuetao Gan +8
Nanoscale and power-efficient electro-optic (EO) modulators are essential components for optical interconnects that are beginning to replace electrical wiring for intra- and inter-…
Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates
Nicholas Petrone, Inanc Meric, James Hone +1
The development of flexible electronics operating at radio-frequencies (RF) requires materials that combine excellent electronic performance and the ability to withstand high level…
High-frequency performance of graphene field effect transistors with saturating IV-characteristics
I. Meric, C. R. Dean, S. -J. Han +4
High-frequency performance of graphene field-effect transistors (GFETs) with boron-nitride gate dielectrics is investigated. Devices show saturating IV characteristics and fmax val…
Graphene field-effect transistors based on boron nitride gate dielectrics
I. Meric, C. R. Dean, A. F. Young +3
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices ex…
Boron nitride substrates for high-quality graphene electronics
C. R. Dean, A. F. Young, I. Meric +8
Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending…
Electronic compressibility of layer polarized bilayer graphene
A. F. Young, C. R. Dean, I. Meric +7
We report on a capacitance study of dual gated bilayer graphene. The measured capacitance allows us to probe the electronic compressibility as a function of carrier density, temper…