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cond-mat.mes-hall2010★ 7.1k cited
Boron nitride substrates for high-quality graphene electronics
C. R. Dean, A. F. Young, I. Meric +8
Graphene devices on standard SiO2 substrates are highly disordered, exhibiting characteristics far inferior to the expected intrinsic properties of graphene[1-12]. While suspending…
cond-mat.mes-hall2010★ 148 cited
Electronic compressibility of layer polarized bilayer graphene
A. F. Young, C. R. Dean, I. Meric +7
We report on a capacitance study of dual gated bilayer graphene. The measured capacitance allows us to probe the electronic compressibility as a function of carrier density, temper…