Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition

Abstract

We demonstrate digital tuning of the slow-light regime in silicon photonic-crystal waveguides by performing atomic layer deposition of hafnium oxide. The high group-index regime was deterministically controlled (red-shift of 140 +/- 10 pm per atomic layer) without affecting the group-velocity dispersion and third-order dispersion. Additionally, differential tuning of 110 +/- 30 pm per monolayer of the slow-light TE-like and TM-like modes was observed. This passive post-fabrication process has potential applications including the tuning of chip-scale optical interconnects, as well as Raman and parametric amplification.

14 pages, 5 figures

References in corpus (3)

• Digital resonance tuning of high-Q/Vm silicon photonic crystal nanocavities by atomic layer deposition
• Observations of Spontaneous Raman Scattering in Silicon Slow-light Photonic Crystal Waveguides
• Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition

Cited by in corpus (4)

• Mode-locked ultrashort pulse generation from on-chip normal dispersion microresonators
• Selective tuning of high-Q silicon photonic crystal nanocavities via laser-assisted local oxidation
• Deterministic tuning of slow-light in photonic-crystal waveguides through the C and L bands by atomic layer deposition
• Phase Resolved Observations of Temporal Soliton Pulse Propagation in Silicon Nanowires