29 citations · 65 across the 5 of their papers we have counts for
5 papers
Semianalytical quantum model for graphene field-effect transistors
Claudio Pugnaghi, Roberto Grassi, Antonio Gnudi +4
We develop a semianalytical model for monolayer graphene field-effect transistors in the ballistic limit. Two types of devices are considered: in the first device, the source and d…
Boosting the voltage gain of graphene FETs through a differential amplifier scheme with positive feedback
Roberto Grassi, Antonio Gnudi, Valerio Di Lecce +3
We study a possible circuit solution to overcome the problem of low voltage gain of short-channel graphene FETs. The circuit consists of a fully differential amplifier with a load…
Exploiting negative differential resistance in monolayer graphene FETs for high voltage gains
Roberto Grassi, Antonio Gnudi, Valerio Di Lecce +3
Through self-consistent quantum transport simulations, we evaluate the RF performance of monolayer graphene FETs in the bias region of negative output differential resistance. We s…
Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering
Roberto Grassi, Antonio Gnudi, Ilaria Imperiale +3
In this paper, we present a mode space method for atomistic non-equilibrium Green's function simulations of armchair graphene nanoribbon FETs that includes electron-phonon scatteri…
Contact-induced negative differential resistance in short-channel graphene FETs
Roberto Grassi, Tony Low, Antonio Gnudi +1
In this work, we clarify the physical mechanism for the phenomenon of negative output differential resistance (NDR) in short-channel graphene FETs (GFETs) through non-equilibrium G…