146 citations · 279 across the 9 of their papers we have counts for
9 papers
Graphene phase modulators operating in the transparency regime
H. F. Y. Watson, A. Ruocco, M. Tiberi +10
Next-generation data networks need to support Tb/s rates. In-phase and quadrature (IQ) modulation combine phase and intensity information to increase the density of encoded data, r…
Characterization of the Intrinsic and Extrinsic Resistances of a Microwave Graphene FET Under Zero Transconductance Conditions
Xiomara Ribero-Figueroa, Anibal Pacheco-Sanchez, Aida Mansouri +7
Graphene field-effect transistors exhibit negligible transconductance under two scenarios: for any gate-to-source voltage when the drain-to-source voltage is set to zero, and for a…
Optical pumping of electronic quantum Hall states with vortex light
Deric Session, Mahmoud Jalali Mehrabad, Nikil Paithankar +13
A fundamental requirement for quantum technologies is the ability to coherently control the interaction between electrons and photons. However, in many scenarios involving the inte…
Chiral transport of hot carriers in graphene in the quantum Hall regime
Bin Cao, Tobias Grass, Olivier Gazzano +12
Photocurrent (PC) measurements can reveal the relaxation dynamics of photo-excited hot carriers beyond the linear response of conventional transport experiments, a regime important…
Inkjet printed circuits with two-dimensional semiconductor inks for high-performance electronics
Tian Carey, Adrees Arbab, Luca Anzi +12
Air-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic inks with two-d…
Suspended Monolayer Graphene under True Uniaxial Deformation
Ioannis Polyzos, Massimiliano Bianchi, Laura Rizzi +5
2D crystals, such as graphene, exhibit the higher strength and stiffness of any other known man-made or natural material. So far, this assertion has been primarily based on modelli…
Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors
Enrique A. Carrion, Andrey Y. Serov, Sharnali Islam +6
We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain c…
Nanolithographic templates using diblock copolymer films on chemically heterogeneous substrates
Vassilios Kapaklis, Spyridon Grammatikopoulos, Roman Sordan +6
The orientation of the lamellae formed by the phase separation of symmetric diblock copolymer thin films is strongly affected by the wetting properties of the polymer blocks with r…
Integrated complementary graphene inverter
Floriano Traversi, Valeria Russo, Roman Sordan
The operation of a digital logic inverter consisting of one p- and one n-type graphene transistor integrated on the same sheet of monolayer graphene is demonstrated. The type of on…