258 citations · 747 across the 10 of their papers we have counts for
10 papers
Theory of the Strain Engineering of Graphene Nanoconstrictions
Masahiko Hayashi, Hideo Yoshioka, Hikari Tomori +1
Strain engineering is one of the key technologies for using graphene as an electronic device: the strain-induced pseudo-gauge field reflects Dirac electrons, thus opening the so-ca…
Andreev Reflection in a Bilayer Graphene Junction: Role of Spatial Variation of the Charge Neutrality Point
Yositake Takane, Katsuhide Yarimizu, Akinobu Kanda
A graphene sheet partially covered with a bulk superconductor serves as a normal conductor--superconductor (NS) junction, in which electron transport is mainly governed by Andreev…
Observation of Tunneling Current in Semiconducting Graphene p-n Junctions
Hisao Miyazaki, Michael Lee, Song-Lin Li +3
We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in t…
Introducing Nonuniform Strain to Graphene Using Dielectric Nanopillars
Hikari Tomori, Akinobu Kanda, Hidenori Goto +5
A method for inducing nonuniform strain in graphene films is developed. Pillars made of a dielectric material (electron beam resist) are placed between graphene and the substrate,…
Complementary-like Graphene Logic Gates Controlled by Electrostatic Doping
Song-Lin Li, Hisao Miyazaki, Michael V. Lee +3
Realization of logic circuits from graphene is very attractive for high-speed nanoelectronics. However, the intrinsic ambipolar nature hinders the formation of graphene logic devic…
Influence of disorder on conductance in bilayer graphene under perpendicular electric field
Hisao Miyazaki, Kazuhito Tsukagoshi, Akinobu Kanda +2
Electron transport in bilayer graphene placed under a perpendicular electric field is revealed experimentally. Steep increase of the resistance is observed under high electric fiel…