Conductivity engineering of graphene by defect formation

Abstract

Transport measurements have revealed several exotic electronic properties of graphene. The possibility to influence the electronic structure and hence control the conductivity by adsorption or doping with adatoms is crucial in view of electronics applications. Here, we show that in contrast to expectation, the conductivity of graphene increases with increasing concentration of vacancy defects, by more than one order of magnitude. We obtain a pronounced enhancement of the conductivity after insertion of defects by both quantum mechanical transport calculations as well as experimental studies of carbon nano-sheets. Our finding is attributed to the defect induced mid-gap states, which create a region exhibiting metallic behavior around the vacancy defects. The modification of the conductivity of graphene by the implementation of stable defects is crucial for the creation of electronic junctions in graphene-based electronics devices.

8 pages, 8 figures

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• Vacancies in graphene: an application of adiabatic quantum optimization
• Inelastic electron tunneling spectroscopy at local defects in graphene
• Molecular Graphene under the Eye of Scattering Theory
• Functionalization of edge reconstructed graphene nanoribbons by H and Fe: A density functional study
• Effect of disorder on the electronic properties of graphene: a theoretical approach
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• Multifield phonon spectrometrics of structured liquid and solid crystals
• The Interplay between Curvature Effect and Atomic Vacancy Defects in the Electronic Properties of Semi-Metallic Carbon Nanotubes